Abstract
Semi-polar (1 1 2¯ 2) GaN layers were selectively grown by metal organic chemical vapor phase epitaxy on patterned Si (3 1 1) substrates without SiO 2 amorphous mask. The (1 1 2¯ 2) GaN layers could be selectively grown only on Si (1 1 1) facets when the stripe mask width was narrower than 1 μm even without SiO 2. Inhomogeneous spatial distribution of donor bound exciton (DBE) peak in low-temperature cathodoluminescence (CL) spectra was explained by the difference of growth mode before and after the coalescence of stripes. It was found that the emission intensity related crystal defects is drastically decreased in case of selective growth without SiO 2 masks as compared to that obtained with SiO 2 masks.
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