Investigation of the optical properties of InGaAs(N):(Sb) quantum wells grown by metal organic vapor phase epitaxy

Abstract

Dilute-nitride materials have attracted much attention due to their capability of operating in the wavelength range of optical communication. However, their optical properties degrade with the nitrogen incorporation into the host material such as InGaAs or GaAs, which can be recovered slightly by performing thermal treatment. More recently, the surfactant effect of Sb was verified by molecular beam epitaxy grown samples. Adding Sb into dilute-nitride materials can help to maintain the luminescence efficiency while increasing the emission wavelength toward 1.55μm. But its effect on the metal organic vapor phase epitaxy grown samples is not very clear. In this article, we performed a series of experiments on the InGaAsN(Sb) quantum wells to clarify the role of Sb. The photoluminescence (PL) intensities of InGaAsN:Sb were higher than those of the undoped samples and the extent of blueshift after annealing was slighter than that of the InGaAsN quantum wells. However, the PL intensities were still low and thus we tried another material (InGaAs:Sb) to achieve the 1.3μm emission. The temperature dependent PL measurements were also carried out to investigate the optical properties of InGaAs:Sb quantum wells.