Abstract
In this article, we study the formation of self-assembling uncapped InP islands grown by metal organic vapor phase epitaxy on (100) GaP. Statistical analysis of the AFM data for this fresh sample show three-modal distribution of vertical height InP islands with elliptical base shape. At low temperature, linearity of islands (wetting layer (WL)) photoluminescence (PL) integrated emission with excitation power indicated low defect density on island (WL) interfaces. Uncapped InP islands are unstable with time, their size increases as their surface density decrease and their height distribution change with time. However, a broadening in PL spectra is observed as a function of time. This broadening can be correlated to the rearrangement versus time of the island height distribution as seen by AFM analysis.
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