Abstract
Polycrystalline zinc oxide (ZnO) films were prepared by radio frequency (RF) magnetron sputtering under different powers. The XRD results showed that ZnO crystallite size along c-axis decreased by 43% with deposition power increased from 60 W to 300 W, increased 36% with annealing temperature rising to400∘C. TDS measurement revealed that the desorption peaks of both atomic Zn (60 W-deposited) and oxygen molecule (180 W and 300 W-deposited) obtained from ZnO films were originated from300∘C. When annealing temperature was higher than300∘C, the sheet resistance dramatically decreased, and compressive stress in the (002) plane changed to tensile stress as well. The comparison measurements of ZnO films crystallinity strongly suggested that both lower deposition power and certain thermal annealing temperature over300∘Cwould contribute to the formation of high quality ZnO films.
Highlights
In recent years, applications of zinc oxide (ZnO) as switching devices and majority carrier devices in thin film transistors (TFTs) have attracted many researches [1,2,3]
ZnO film deposited with different powers as well as thermal annealing effects were investigated in detail, which will give a significant help on the low-temperature TFTs fabrication processes
Co., Inc) measurement for the same samples, in which the reflective indexes of the ZnO films were slightly increased with decreasing radio frequency (RF) power, indicating that the films densities were decreased with increasing RF power
Summary
Applications of ZnO as switching devices and majority carrier devices in thin film transistors (TFTs) have attracted many researches [1,2,3]. Effects of sputtering variables on ZnO film properties have been some of the major research topics. A gate insulator is deposited on the ZnO layer at about 250◦C for top-gate fabrication in ZnO thin-film transistors (TFTs) [10]. Either deposition parameters or thermal-annealing effect is necessary for investigation of future commercialization of TFT fabrication processes. ZnO film deposited with different powers as well as thermal annealing effects were investigated in detail, which will give a significant help on the low-temperature TFTs fabrication processes
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