Abstract
We calculate the electron structure of δ-doped GaAs quantum wells within a realistic sp3s* tight-binding formalism, including spin. The results reveal the existence of a series of many quasi-bound states with a very strong spatial and energetic localization. For a donor impurity concentration of n2D = 1 × 1013 cm–2 the full width at half maxima (FWHM) of the first quasi-bound state is 1.5 × 10–3 meV and the corresponding mean-life time is about 4 ns. This value is 103 times greater that the mean lifetime reported for Bragg's reflectors based on quantum wells. We find many similar features of the symmetry, spatial and energetic characteristics between quasi-bound and bound states. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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