Quasi-Bound Hole States in δ-Doped Quantum Wells

Abstract

We study the electron structure of Be δ-doped quantum wells in GaAs above the valence band edge of GaAs. The δ-potential is treated as external and a semi-empirical sp3s* tight-binding model including spin is applied. The energies and the spatial distributions of some resonant hole states are calculated. We may consider these hole states as quasi-bound states. They are much more spatially localized than similar states in rectangular quantum wells. It means that some optical transitions of the quasi-bound states in δ-doped quantum wells can be experimentally observed.