Investigation of Optical Gain in 1.55 μm p-i-n GaNAsBi-Based DQWs

Abstract

We have theoretically investigated the 1.55 μm p-type doped GaNAsBi-based double quantum wells (DQWs) using the (16 × 16) BAC model combined with a self-consistent calculation. We have found that the coupling effect becomes more pronounced by reducing barriers width. The optical performance of the structure is enhanced when the DQWs are coupled and doped. Moreover, a p-i-n heterojunction based on GaAs/GaNAsBi/GaAs DQWs designed for infrared photodetection was developed. The optimization of well parameters such as the bismuth composition, the well width, and the doping densities give rise to p-i-n heterojunction emitting at the wavelength 1.55 μm. The computed gain can reach the value 3 104 cm−1. The quantum confined stark effect on the optical properties of studied structures is also discussed.