Mean life times of quasi-bound states in δ-doped GaAs quantum wells

Abstract

We present a theoretical study of the mean life times of the electron and hole quasi-bound states in δ-doped GaAs quantum wells. The full width at half-maxima and the mean life time are found for a series of donor and acceptor concentrations. The spatial localizations of these states are calculated and discussed in relation with theirs line shapes. The numerical calculations are performed within the framework of the semi-empirical sp 3s* tight-binding model taking into account the spin.