Abstract
In this work tight binding calculations in Be δ-doped GaAs quantum wells with an electric field applied along the [001] growth direction are presented. The Stark shifts of the hole electronic states for different impurity concentrations and electric field strengths are calculated. The δ-potential is treated as an external potential following the approach described earlier. A comparison with Stark effects in rectangular and graded-gap quantum wells is made. † Also with Facultad de Ciencias, Universidad Autonoma del Estado de Morelos, Av. Universidad 1001, Col. Chamilpa, Cuernavaca 62210, MOR., Mexico
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