Raman spectroscopy of monoatomic hydrogen at dislocations in silicon

Abstract

A broad Raman peak at about 2000 cm-1 was found in hydrogenated silicon foils with a regular dislocation network (DN) produced by silicon wafer bonding. It was not observed in the reference foils without a dislocation network. The hydrogenation was performed from acid water solution at room temperature. The peak was ascribed to monoatomic hydrogen in silicon bond centered position that became stable in a close vicinity to the dislocation cores in opposite to the case of the regular lattice where its molecular form is energetically favorable.