Abstract
The investigation of regular dislocation networks (DN) formed by direct wafer bonding suggests that the D1 and D2 peaks of dislocation-related luminescence (DRL) in silicon is linked to screw dislocations, whereas edge dislocations are responsible for D3 and D4 DRL peaks. Non-radiative recombination activity in DN could be attributed to edge dislocations and could be related to enhanced ability of these dislocations to getter impurity atoms. Obtained relation of DRL intensity with the density of screw dislocations suggests existence of the optimum twist angle for the wafer-bonding geometry for which the DRL intensity has a maximum. The dependence of DRL intensity on the spacing between screw dislocations has the maximum at about 7 nm. Reported radiative and non-radiative recombination properties of DN present substantial interest not only for possible LED applications in all-Si photonics but also for photovoltaics, since DNs represent a model system for grain boundaries controlling carrier lifetime in microcrystalline-Si material.
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