Regular Dislocation Networks in Silicon. Part I: Structure

Abstract

Dislocation networks obtained by hydrophobic wafer bonding of Si (100) are investigated. The twist and tilt misorientations induce two interacting dislocation networks. Advanced bonding techniques are applied and optimized allowing to eliminate the tilt and to control the twist misorientation. At very low twist angles the interfaces no longer exhibit regular dislocation networks. Properties of dislocation networks are discussed.