Abstract
Dislocation networks obtained by hydrophobic wafer bonding of Si (100) are investigated. The twist and tilt misorientations induce two interacting dislocation networks. Advanced bonding techniques are applied and optimized allowing to eliminate the tilt and to control the twist misorientation. At very low twist angles the interfaces no longer exhibit regular dislocation networks. Properties of dislocation networks are discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
