Abstract
We have introduced in a simple and efficient manner quantum mechanical corrections in our 3D ’atomistic’ MOSFET simulator using the density gradient formalism. We have studied in comparison with classical simulations the effect of the quantum mechanical corrections on the simulation of random dopant induced threshold voltage fluctuations, the effect of the single charge trapping on interface states and the effect of the oxide thickness fluctuations in decanano MOSFETs with ultrathin gate oxides. The introduction of quantum corrections enhances the threshold voltage fluctuations but does not affect significantly the amplitude of the random telegraph noise associated with single carrier trapping. The importance of the quantum corrections for proper simulation of oxide thickness fluctuation effects has also been demonstrated.
Highlights
The scaling of MOSFETs in integrated circuits is reaching the stage where the granularity of the electric charge and the atomicity of matter start to introduce substantial variation in the characteristics of the individual devices and has to be included in the device simulations
In this paper we study the influence of the quantum effects in the inversion layer on the parameter fluctuations in decanano MOSFETs
The quantum mechanical (QM) effects are incorporated in our previously published 3D ’atomistic’ simulation approach [4] using a 3D implementation of the density gradient (DG) formalism. This results in a 3D, QM picture which incorporates the vertical inversion layer quantization, lateral confinement effects associated with the current filamentation in the valleys of the potential fluctuation, and eventually tunnelling through the sharp potential barriers associated with individual dopants
Summary
The scaling of MOSFETs in integrated circuits is reaching the stage where the granularity of the electric charge and the atomicity of matter start to introduce substantial variation in the characteristics of the individual devices and has to be included in the device simulations. Until recently [9] it was unclear to what extent the quantum effects may enhance or reduce the variations in the device characteristics associated with random dopant, and oxide thickness fluctuation and the effects associated with trapping/detrapping of individual interface charges. The quantum mechanical (QM) effects are incorporated in our previously published 3D ’atomistic’ simulation approach [4] using a 3D implementation of the density gradient (DG) formalism This results in a 3D, QM picture which incorporates the vertical inversion layer quantization, lateral confinement effects associated with the current filamentation in the valleys of the potential fluctuation, and eventually tunnelling through the sharp potential barriers associated with individual dopants
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