Properties of VO 2 thin film prepared with precursor VO(acac) 2

Abstract

Both pure and tungsten (W)- or chromium (Cr)-doped vanadium dioxide (VO 2) thin films have been deposited by the sol–gel method on Si substrate using VO(acac) 2 as a precursor. XRD, Raman and atomic force microscopy (AFM) measurements showed the high (1 1 0) orientation of the films. It was found that the temperature coefficient of resistivity (TCR) values of the films around room temperature could be adjusted by impurity doping. Compared with the un-doped VO 2 films, the W-doping leads to larger TCR values, while the Cr-doping leads to smaller ones. The TCR value is linearly dependent on the impurity at room temperature. The largest TCR value of 5.2/% K −1 was obtained for 20/at% W-doped VO 2 film.