Abstract
GaP Schottky barrier diodes were studied between 25 and 500°C. A Ni-Ge alloy provided good ohmic contacts over this entire temperature range whereas Cr or Ni were satisfactory metals for the Schottky barriers. The slope of 1n I vs. V plots was 1.1 at all temperatures. The barrier height for Cr was found to be 1.2 eV from either C-V or I s - T measurements. The barrier height did not change with the impurity concentration but was a weak function of temperature. The diodes had reverse breakdown voltages above 250 V at room temperature and showed significant rectifying characteristics up to 500°C. When these devices were used as photodiodes, they showed a maximum internal quantum efficiency of approximately 25 per cent at wavelengths around 4500 Å.
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