Abstract
The chemisorption of various functionalizing agents on (100) and (111)B gallium arsenide and (100) indium phosphide substrates is studied to elaborate a wet‐chemical surface coating protocol for gallium arsenide based nanowires. Application of (non‐)fluorinated alkanethiols under different parameters shows great success resulting in a decreased polarity of the surface (confirmed by a significant increase of the water contact angle) and no occurrence of etching effects. The successful functionalization is determined by X‐ray photoelectron spectroscopy measurements. After optimization of concentration, additives and solvents, the process parameters are transferred to both, p‐ and n‐doped GaAs‐based nanowire structures. The influence of surface functionalization on the electrical behavior of the nanowires is determined by current–voltage characteristics. Based on the experimental data, a bonding mechanism for the alkanethiol onto the semiconductor material is proposed and a model for describing surface depletion before and after functionalization is developed.
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