Abstract
The influence of doping in gallium arsenide and indium phosphide substrates was followed by X ray transmission topography and precise lattice parameter measurements. The elimination of crystal defects such as precipitates or dislocations can be achieved by a suitable doping, isoelectronic in the case of gallium arsenide with indium substitution level in the range of 0.5 to 1.5 10−2 (Schiller & al., 1986), and sulfur in the case of indium phosphide with an optimum of sulfur concentration about 5 × 10l8 cm−3 (Farges & al., 1986). Relative lattice parameter measurements and cathodoluminescence images show that misfit dislocations can grow even in the case of homoepitaxy of GaAs on In doped GaAs substrates.
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