Thick-walled coating in Gunn diode for measuring of electromagnetic radiation power in microwave range

Abstract

In the introduction, the analysis of the physical basis for the operation of the semiconductor Gunn diode is carried out and the issues that should be resolved in substantiation of the basic physical principles of this diode operation are stated. At applied voltages of up to 0.6 V to a gallium arsenide or indium phosphide Gunn diode, free electrons appear in the conduction band of aluminum as a result of ionization of negative ions of gallium or indium atoms. At voltages from 0.6 to 2.0 V, free electrons appear in the aluminum conduction band as a result of ionization of negative ions of arsenic atoms, and at voltages from 0.6 to 3.0 V — phosphorus. The formation of negative gallium or indium ions is caused by electron capture directly from the aluminum base, while the formation of negative arsenic or phosphorus ions is mainly due to spontaneous electron transfer from the aluminum conduction band and from the negative gallium or indium ions. Electric current flows only over the surface of a gallium arsenide or indium phosphide crystal. The frequency of electric current oscillation is defined by the voltage applied to the Gunn diode and the thickness of the gallium arsenide or indium phosphide crystal. Determination of the power of microwave signals by the Gunn diode is carried out by applying a constant voltage between the cathode and the anode, which provides the frequency of current oscillation equal to the frequency of the measured microwave signal. The maximum radiation power in microwave wavelengths measured by the Gunn diode is determined by the equality of the electromagnetic wave perturbation energy and the electron affinity energy of gallium or indium atoms in the vicinity of the aluminum conduction band.