Abstract
The specific features of the interaction of vanadium(V) oxide nanofilms with the surface of gallium arsenide and indium phosphide semiconductors under thermal oxidation conditions have been considered. The kinetics and mechanism of thermal oxidation of GaAs and InP with deposited V2O5 layers 15 and 25 nm in thickness have been studied. It has been revealed that vanadium(V) oxide exerts a specific effect on the oxidation of gallium arsenide and indium phosphide as compared to other d-metal oxides. It has been established that the oxidation occurs with the formation of a phase predominantly consisting of indium phosphates or gallium arsenates and intermediate products based on vanadium compounds in different oxidation states. Schemes have been proposed for the development of the oxidation processes with due regard for the chemical nature of vanadium(V) oxide.
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