Abstract
(Y,Yb)MnO3 films were prepared on Y2O3-buffered n-type Si(111) substrates using alkoxy-derived precursor solutions and rapid thermal annealing at 750°C in Ar. The (Y,Yb)MnO3 films crystallized to hexagonal phase and had high crystallinity and high degrees of c-axis orientation. The hexagonal (Y,Yb)MnO3 films consisted of uniform grains and had smooth surfaces. The electrical properties of the 200-nm-thick Y0.5Yb0.5MnO3 films crystallized on the Y2O3/Si(111) substrates at 750°C in Ar were investigated. The leakage current density of the Pt/Y0.5Yb0.5MnO3/Y2O3/Si capacitor was 1.0×10-8 A/cm2 at an applied voltage of 5 V. The counterclockwise capacitance-voltage (C-V) hysteresis induced by ferroelectric polarization switching was observed in the Pt/Y0.5Yb0.5MnO3/Y2O3/Si capacitor.
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