Abstract
(Y,Yb)MnO3 and HfO2 films were prepared using alkoxy-derived precursor solutions, and (Y,Yb)MnO3/HfO2/Si structures were fabricated. The thickness, surface uniformity and crystallinity of the HfO2 film affect the crystallization of Y0.5Yb0.5MnO3 films. The degree of c-axis orientation and crystallinity of the Y0.5Yb0.5MnO3 films were changed with preparation conditions of HfO2 films. It was difficult to obtain Y0.5Yb0.5MnO3 films with high crystallinity and high degree of c-axis orientation on the HfO2 films thinner than 10 nm. The degree of c-axis orientation and crystallinity of the Y0.5Yb0.5MnO3 films on HfO2 films were improved by using diluted HfO2 precursor solution in the case of 10 nm-thick HfO2 film. Following this, the capacitance-voltage (C-V) characteristics were improved.
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