Abstract
ABSTRACT The MFIS structures were constructed using HfO2 layers and (Y, Yb)MnO3 films through the chemical solution process. The good electrical properties were obtained in the MFIS structure with 10 nm-thick insulating layer and 200 nm-thick ferroelectric film. The clockwise C-V hysteresis induced by ferroelectric polarization switching was observed in the MFIS structures. The memory window of MFIS using improved HfO2 layer was about 2 V and the retention time was over 105s. The capacitance of 5 nm-thick HfO2 layers decreased with increasing the temperature because of the formation of SiO2-based interface layer. The good interface was not obtained and the degree of c-axis orientation and crystallinity became worse as compared with the MFIS structure using 10 nm-thick HfO2 layer. This affected the electrical properties. The interface needs to be improved by optimizing of crystallization condition.
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