Abstract

Ca 0.18Na 0.32Bi 0.50TiO 3 (CNBT) ferroelectric thin films were prepared by metalorganic solution deposition on silicon substrate and annealed at different temperatures. The morphology and structure of the films were characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The crystal structure of Ca-doped Na 0.50Bi 0.50TiO 3 films shows no obvious lattice distortion compared with that of un-doped one. The optimal heat treatment process for CNBT films were determined to be high-temperature drying at 400 °C for no less than 15 min followed by annealing at 600 °C for 5 min, which leads to the formation of compact films with uniform grains of 30–50 nm. Ferroelectric property measurement shows that the remanent polarization of CNBT films is 18 times higher than that of un-doped Na 0.50Bi 0.50TiO 3 (NBT) thin films.

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