Effects of annealing conditions on orientations of Bi3˙2Y0˙8Ti3O12 ferroelectric films prepared by metalorganic solution deposition

Abstract

Fatigue free Bi3˙2Y0˙8Ti3O12 ferroelectric thin films were successfully prepared on p-Si(100) substrates using metalorganic solution deposition process. The formation and orientation of thin films were studied under annealing conditions with X-ray diffraction and SEM. Experiment results indicated that the preannealing at 400°C for 10 min followed by rapid thermal annealing at 700°C resulted in the formation of (200)-oriented films, and the (200)-orientation degree (l(200)/l(117)) was remarkably increased from 1˙033 to 1˙76 and 6˙49 with increasing annealing time from 3 to 10 min and 15 min respectively after the preannealing. However, only (117)-oriented films were obtained by annealing films at 700 and 800°C for 3 min respectively without preannealing.