Abstract
Ion induced sputtering of pure LiF- and LiF: U-crystals containing between 0.03 and 0.33 wt% of U was investigated using 200 keV 40Ar +- and 84Kr +-ions in the dose range of 3.3 × 10 15to 3.9 × 10 18cm −2. The sputtered Li- and U-atoms collected on Teflon/Au-catcher foils were measured in 2 π-geometry by means of α-tracks and fission tracks, respectively, making use of the 6 Li( n,α) - and 235U(n, f)-reactions. The total sputtering yield was derived from Tolansky interference measurements on the target spot area. The concentration of fluorine, uranium and the implanted ion species within the target was analyzed by RBS, giving indications of radiation enhanced diffusion. The influence of the U-dopant on the sputtering behaviour of LiF: U is discussed.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
