Total and differential sputter yields of boron nitride measured by quartz crystal microbalance

Abstract

We present differential sputter yield measurements of boron nitride due to bombardment by xenon ions. A four-grid ion optics system is used to achieve a collimated ion beam at low energy (<100 eV). A quartz crystal microbalance is used to measure differential sputter yield profiles of condensable components from which total sputter yields can also be determined. We report total and differential sputter yields of three grades of boron nitride due to bombardment by xenon ions for ion energies in the range 60–500 eV and ion incidence angles of 0°, 15°, 30° and 45° from the normal. Comparisons with published values are made where possible.