Abstract
AbstractComprehensive electrical and optical measurements on certain lightly Cu diffused Au-CdSjunctions confirm photoconductive response on a mechanism of light-induced lowering of an electrostatic surface barrier. Electron per photon gain between 105 and 107 and threshold exposures in the range 1012 to 1013 cm-2 have been observed in junctions whose width is less than 5000 A. Arguments will be advanced which indicate a minimum exposure of about 5 x 109 cm-2 for this type of device. Implications for electrolytic imaging systems will be mentioned.
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