Abstract
Photo-assisted metalorganic vapor-phase epitaxy was proposed as a promising technique for acceptor doping in ZnSe-based semiconductors. The growth was carried out using diethyzinc and dimethylselenide as source precursors, and tertiarybutylamine as a dopant material. Photoluminescence, electrical properties of Schottky diodes, and electroluminescence of junction diodes supported p-type behavior of the ZnSe:N layers. As an example, net acceptor concentration was estimated as 2 × 10 17 cm -3 for the ZnSe:N layer with nitrogen atomic concentration of 5 × 10 17 cm -3. However, it was also pointed out that the doping characteristics were seriously affected by purity of source precursors, and this problem should be overcome, together with optimization of doping conditions, in order to achieve higher acceptor concentrations without heavy compensation.
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