Abstract
Doping characteristics and electrical properties have been studied for Mg-doped AlxGa1−xN grown by atmospheric pressure MOCVD, using Cp2Mg. The net acceptor concentration increased with increasing [Cp2Mg]/[III] and saturated at about 7×1018cm−3 for x=0.15, while the Mg concentration did not saturate up to 5×1019cm−3. Both of them were rather small than those of GaN, although they gradually increased with increasing Al mole fraction. The hole concentration as high as 6.6×1016cm−3 was obtained and the hole thermal activation energy (ΔEA) has been estimated to be about 250meV for x=0.15 from the relation between the net acceptor concentration and the hole concentration at room temperature. The electrical resistivity increased with increasing x, and the value, 15Ωcm, for x=0.15 was considerably higher than that for GaN (∼2Ωcm).
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
