Abstract
Li-doped ZnSe films have been grown on misoriented GaAs(0 0 1) substrates by molecular-beam epitaxy to investigate the effects of step density on the electrical and the optical properties. We found that the net acceptor concentration in Li-doped ZnSe has a strong relationship with the step density on the GaAs substrates and the misorientation direction. The net acceptor concentration on the off-substrate towards [1 1 0] is higher than that on the off-substrate towards [1 1 0]. The difference in Li concentration can be explained by the doping efficiency and the generation of donor-like centers.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
