Low temperature growth of InGaAs layers on misoriented GaAs substrates by metalorganic vapor phase epitaxy

Abstract

InGaAs layers with In composition of 0.57 were grown with metalorganic vapor phase epitaxy (MOVPE) using graded buffer layers on exactly oriented and misoriented GaAs(100) substrates. No mirror-like surface was obtained at growth temperatures between 570 °C and 630 °C. A mirror-like surface was achieved at a growth temperature of 450 °C. The threading dislocation density in the layer grown at 450 °C on the GaAs substrate misoriented toward (111)A was determined to be 1×107 cm−2 using transmission electron microscopy. Photoluminescence results also confirmed that the density of recombination centers in layers grown at 450 °C was low. Low temperature growth with MOVPE was found to be effective in InGaAs layers on GaAs substrates with high In composition above 0.4.