Abstract
The strain induced heavy hole and light hole exciton splitting of ZnSe1−xSx (x<0.1) epilayers grown on misoriented GaAs (001) substrates has been studied by reflectance spectroscopy. The heavy hole and light hole exciton energies are determined by the composition of the layers. It was concluded that for both thin (largely unrelaxed strain) and thick epilayers (with largely relaxed strain) misorientation of the substrate results in increase of x, i.e., in increasing incorporation of sulphur. However, the additional strain expected due to the increasing incorporation of sulphur with misorientation was not observed due to partial strain relief of the epilayers grown on misoriented substrates. The optical quality of the epilayers is tilt angle dependent and is best for about 10° tilt from the (001) direction.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
