Abstract
Doping characteristics of nitrogen in ZnSe using photo-assisted vapor phase epitaxy were investigated. The source precursors and the doping source were diethylzinc, dimethylselenide, and tertiarybutylamine. Photoluminescence, electrical properties of Schottky diodes, and electroluminescence from homo and double heterojunction diodes consistently supported p-type behavior of the ZnSe:N layers. At the conditions investigated, higher doping was achieved at lower substrate temperature and irradiation intensity; e.g., 350°C and 45 mW/ cm2, respectively. As a guideline, net acceptor concentration was estimated as 2 x 1017 cm-3 for the ZnSe:N layer with nitrogen concentration of 5 x 1017 cm-3 revealed by secondary ion mass spectroscopy.
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