Abstract
Abstract Annealing effect on net acceptor concentration in ZnSe:N is investigated. ZnSe:N homo-epitaxial layer was grown at 823 K by MOCVD using ammonia (NH 3 ) as a dopant source. Photoluminescence (PL) spectra measured on as-grown layer exhibited the strong deep donor–acceptor pair (D d AP) emission and the weak I 1 N emission line. In order to enhance the activation of nitrogen in ZnSe epitaxial layer, sample was annealed at the 823 K in nitrogen (N 2 ) and hydrogen (H 2 ) atmosphere. Only the annealing in nitrogen atmosphere increased I 1 N emission intensity indicate the activation of nitrogen acceptor. And net acceptor concentration was estimated to be 3 × 10 17 cm −3 by C – V measurements. This activation mechanism is interpreted as hydrogen is released from N–H bonds during annealing in nitrogen atmosphere.
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