Abstract
Nitrogen doping into ZnSe was carried out by photoassisted metalorganic vapor-phase epitaxy using diethylzinc and dimethylselenium. Tertiarybutylamine (t-BNH2) was used as a doping source. Photoluminescence, electrical properties of Schottky diodes, and electroluminescence from ZnSe:N/n-ZnSe:Ga diodes revealed acceptor incorporation and p-type behavior in the ZnSe:N layers. Low-temperature (350°C) growth and low irradiation intensity (45 mW/cm2) were found to be desirable for effective doping. As an example, for the ZnSe:N layer with nitrogen concentration of 5×1017 cm-3 revealed by secondary ion mass spectroscopy, net acceptor concentration was estimated to be 2×1017 cm-3 from capacitance measurements of the Schottky diodes as a first approximation.
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