Abstract
By combining infrared absorption measurement of EL2 concentration with conventional measurement of Hall resistivity and mobility, the correlations between the total (neutral plus ionized) EL2 concentration, the net acceptor concentration, and the Hall characteristics across a semi-insulating GaAs wafer have been determined. An increase in the total EL2 concentration is found to be accompanied by a decrease in the resistivity and increase in mobility. Furthermore, there is a positive correlation between the EL2 concentration and the net acceptor concentration.
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