Abstract
Total EL2 concentration distribution and net acceptor concentration distribution in undoped semi-insulating(SI) LEC GaAs have been measured by multi-wavelength infrared absorption method. The experimental results indicate that total EL2 concentration radial distribution is W-shaped and net acceptor concentration radial distribution is sample-dependent, it can present a ∩ shape, a ∧ shape, or a W shape corresponding to different samples.
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