Abstract
A theoretical model for the surface photovoltage effect (SPV) in undoped semi-insulating (SI) GaAs is presented. This model accounts for the large measured SPV signals for SI material compared with n-type material. The SPV effect in undoped SI GaAs is shown to originate predominantly from the large difference in mobilities between electrons and holes. The low dark conductivity of SI GaAs also plays an important role in determining the large measured signal. In this article experimental SPV data for undoped SI GaAs are presented and explained using the proposed model, providing a value for the ambipolar diffusion length of 1.4 μm. The native surface field contribution to the measured SPV signal is estimated experimentally and found to be negligible in undoped SI GaAs compared with the aforementioned effects.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
