Abstract
The variations of the EL2 concentration in undoped semi-insulating (SI) GaAs crystals with arsenic pressure, P AS2 , during high-temperature annealing have been investigated using infrared absorption measurements at 1.1 μm. It is found that the variations can be divided into two types within a range of P AS2 <2 atm, beyond which the EL2 concentration, not varying with P AS2 , approached an apparently saturated value which is correlated with the stoichiometry of as-grown crystals. An improvement on the uniformity of EL2 distributions is achieved after annealing. These results are in agreement with an analysis proposed in a previous paper.
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