OSAT Production Testing of 5G, Power Discretes & 3D packaged ICs

Abstract

The presentation will be segmented into three. OSAT production testing challenges of three vital product families that are important to our semiconductor industry will be showcased in each segment. The first segment will describe the products and impacts to RF production testing of both Sub-8GHz carrier frequency range and the mmWave frequency range of operation. The second segment will explore emerging MOSFET technologies that enable faster switching rates and higher voltage and current topologies. The third segment will describe the challenges of production test content for 3D-stacked advanced packages. 5G RF has enabled mmWave carrier frequencies, small cell deployment, massive MIMO (Multiple In, Multiple Out), beam forming, and full duplex wireless transmission and reception operations. These features require new production test methodologies. There is an astronomical rise in battery powered applications like toys, consumer goods, automotive and trains. Power path turn on/off with MOSFETs is in the critical path. The technology has advanced from the traditional Si to GaN and SiC based products that have a smaller size and allow for higher application efficiencies. Test specifications and limits are improving and production testing methods are evolving to account for these changes. Advanced packaging has enabled the path to integrate chiplets within a single package. Heterogeneous Integration (HI) is a powerful design innovation that allows tighter integration and, in some cases, improved signal and power performance at the system level. Production test methodologies are being streamlined to make test a competitive advantage for our customers.