Abstract
ZnO thin films were prepared by Successive Ionic Layer Adsorption Reaction (SILAR) method. Oriented grain growth in Iodine doped ZnO thin films were studied. The oriented grain growth in samples was studied by comparing the peak intensities from X-ray diffraction data and surface morphology by scanning electron microscopy. It is found that oriented grain growth significantly enhanced by Iodine doping. When the oriented grain growth increases, crystallinity of the thin film improves, resistance and band gap decrease. ZnO thin films having good crystallinity with preferential (002) orientation is a prerequisite for the fabrication of devices like UV diode lasers, acoustic- optic devices etc. A possible mechanism for the oriented grain growth is also investigated. It is inferred that creation of point defects is responsible for the enhanced oriented grain growth in ZnO thin films when doped with iodine.
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