Abstract
ZnO thin films were prepared by successive ionic layer adsorption reaction (SILAR) method. The textured grain growth along c-axis in pure ZnO thin films and doped with Sn was studied. The structural analysis of the thin films was done by X-ray diffraction and surface morphology by scanning electron microscopy. Textured grain growth of the samples was measured by comparing the peak intensities. Textured grain growth and photo current in ZnO thin films were found to be enhanced by doping with Sn. ZnO thin film having good crystallinity with preferential (002) orientation is a semiconductor with photonic properties of potential benefit to biophotonics. From energy dispersive X-ray analysis, it is inferred that oxygen vacancy creation is responsible for the enhanced textured grain growth in ZnO thin films.
Highlights
The synthesis and characterization of ZnO thin film have been an active area of research for nearly half a century
ZnO thin films were prepared by successive ionic layer adsorption reaction (SILAR) method, in which the ZnO thin film was coated on the glass substrate (26 ∗ 76 mm) by Advances in Chemistry
X-ray diffraction (XRD) patterns of ZnO thin films of pure and doped samples are depicted in Figures 1(a) and 1(b)
Summary
The synthesis and characterization of ZnO thin film have been an active area of research for nearly half a century. Due to wide and direct band gap semiconductor, nanostructure ZnO thin films have attracted more attention in optoelectronic devices [4]. ZnO thin films have attracted much attention because they can be tailored to possess high electrical conductivity, high infrared reflectance, and high visible transmittance upon applying different techniques [5,6,7,8]. There are reports that textured grain growth along c-axis in ZnO thin films is enhanced by doping and annealing. In course of the present investigations, textured grain growth in Sn-doped ZnO thin films and photoconductivity were studied. A possible mechanism for the textured grain growth is investigated.
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