Abstract
Results involving the use of a single nanoprobing contact are presented, on both a SiC planar MOSFET device, and a small system-in package. In both cases, mechanical polished samples were prepared, and then probed with a single contact. For the SiC MOSFET, the depletion zones were imaged while the samples were mounted on a 45 ° stub. Discussion of the different signals generated from Passive Voltage Contrast (PVC) and Electron Beam Induced Current (EBIC), as well as possible artifacts of sample grounding, are provided. For the package, Electron Beam Absorbed Current (EBAC) provided indication of connected features within the sample. The experiment showed the capability of measuring features across three orders of magnitude in size.
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