Technique Selection for Front End of Line Defect Localization in Bulk Si FA

Abstract

Abstract This presentation is a pictorial guide to the selection and application of measurement methods for defect localization. The presentation covers electron beam absorbed current (EBAC), electron beam induced current (EBIC), passive voltage contrast (PVC), optical and electron beam induced resistance change methods (OBIRCH and EBIRCH), lock-in thermography, photon emission microscopy (PEM), and nanoprobing. It describes how the measurements are made, the sensing mechanisms involved, and the output that can be expected.