EBIC Technique Study for Implant Doping Problem in Failure Analysis

Abstract

Application of Electron Beam Absorbed Current (EBAC) and Electron Beam Induced Current (EBIC) are commonly used in fault localization for open, high resistance, and short failures at the back-end metal layer, and leakage failure in the front-end layer. However, when a device suffers leakage failure caused by improper implant doping problems, EBC technique can help us to precisely diagnose the failure location. In the general analysis of device failure, the device characteristic measurement usually verifies the leakage with the nano-probing instrument, and then verifies the leakage mechanism by cross-section Focused Ion Beam (FIB) or Transmission Electron Microscopy (TEM) methodologies. However, the physical analysis of implant issue cannot be easily observed by conventional FIB or TEM.In this study, we operate nano-probing to verify the device leakage path from drain to source, and then utilize the principle of Electron Beam Absorbed Current (EBAC) and Electron Beam Induced Current (EBIC) to exactly approach the failure site and successfully demonstrate that the failure mechanism comes from the implant issue which is proved by further Scanning Capacitance Microscopy (SCM) analysis.