Abstract
Abstract : ZERBST has developed a method of measuring both minority carrier lifetime and surface recombination velocity from the transient response of MIS capacitors to a depleting pulse when the capacitors are initially biased in the inversion region. This method is based on an equation relating the rate of change of the capacitance C of the MIS structure, the lifetime pi and the surface recombination velocity s. The report discusses technique for handling the experimental data that can simplify the necessary computation and partially automate the measurements of lifetime and surface recombination velocity.
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