Abstract

In this paper a contactless, all-optical and non-destructive technique for simultaneous measurement of minority carrier recombination lifetime and surface recombination velocity is presented. The principle is based upon measurement, at low injection level, of the free carrier optical absorption transient probed by an infrared beam following electron-hole pair excitation by a pulsed laser beam working at several wavelengths. Being contactless and non-destructive with respect to the surface to be analyzed, the method is appealing for routine lifetime characterization.

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