Abstract
Negative Bias Temperature Instability (NBTI) is suspected to be linked to various other MOSFET phenomena. We report measurements of increased drain current noise, increased gate leakage current, and decreased recoverable threshold voltage shift after multiple cycles of negative bias temperature stress and relaxation for three different technologies. We also find that stress conditions have to be carefully selected, otherwise oxide breakdown will be erroneously interpreted as a correlation between NBTI, noise and gate leakage. Finally, the implications of our findings on the modelling of oxide defects are highlighted.
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