Abstract
In this paper we introduce an approach to increase integration rate of field-effect heterotransistors in the framework of a bootstrap switch. In the framework of the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
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More From: International Journal of Microelectronics Engineering
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