A Model of Manufacturing of a MOSFET-Filter with Account Mismatch-Induced Stress and Porosity of Materials on Increasing of Density of Elements

Abstract

In this paper we introduce an approach to increase integration rate of field-effect heterotransistors in the framework of band-pass filter. In the framework of the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.